High Q SiC microresonators.
نویسندگان
چکیده
We demonstrate photonic devices based on standard 3C SiC epitaxially grown on silicon. We achieve high optical confinement by taking advantage of the high stiffness of SiC and undercutting the underlying silicon substrate. We demonstrate a 20 μm radius suspended microring resonator with Q=14,100 fabricated on commercially available SiC-on-silicon substrates.
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عنوان ژورنال:
- Optics express
دوره 21 14 شماره
صفحات -
تاریخ انتشار 2013